2. 產品介紹
3. 產品目錄
4. 氮化矽半導體設備零件

氮化矽半導體設備零件

1 Si₃N₄乘載盤

產品特色Product Features

• 具有極高的熱導率
• 無毒
• 耐腐蝕
• 耐高溫
• 熱化學穩定性好

產品應用Product Usage

半導體乾、濕蝕刻製程、Mocvd等製程。

 

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氮化鋁塊材規格表

(表格內容可透過左右拖移 )

Item / Unit				AlN
				Block
Thickness			mm	2 ~ 30
Size			mm	<450
Color			-	Beige-Gray
Sape			-	Rotundity
Through hole			mm	-
Bulk density			g/cm3	3.4
Surface roughness			µm	-
Mechanical characteristic	3-point bending strength		MPa	-
	Young's modulus		GPa	-
	Vickers hardness		GPa	-
	Breakdown Strength		kV/mm	-
Thermal characteristic	Coefficient of thermal expansion	40-400℃	×10-6/K	4.8
		40-800℃	×10-6/K	5.4
	Thermal conductivity	25℃	W/(m・K)	170~190
	Specific heat		J/(kg・K)	720
Electric characteristic	Dielectric constant	1MHz	-	9
	Dielectric Loss	1MHz	×10-4	3
	Volume resistivity	25℃	Ω・cm	>1014

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Exposure Churk 規格表

(表格內容可透過左右拖移 )

Items	Normal Temp. Sputtering	High Temp. Sputtering	HCAT
	Japanese Manufacturers	USA Manufacturers	TSV Specification
Susceptor material	Aluminum	Ceramics	Ceramics
Dimension(mm)	Ø330*9	Ø330*9	Ø330*9
Input Voltage(kV)	+/- 3	+/- 3	+/- 3
Operating Temp.(℃)	25~80	150~350	50~350
Dielectric Insulation (GΩ),RT	>1	>1	>1.2
Life-Time(hr)	>1000	>2000	>2000
Breakdown voltage (KV/mm)	10	25	25

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Pin Churk 規格表

(表格內容可透過左右拖移 )

Items	Normal Temp. Sputtering	High Temp. Sputtering	HCAT
	Japanese Manufacturers	USA Manufacturers	TSV Specification
Susceptor material	Aluminum	Ceramics	Ceramics
Dimension(mm)	Ø330*9	Ø330*9	Ø330*9
Input Voltage(kV)	+/- 3	+/- 3	+/- 3
Operating Temp.(℃)	25~80	150~350	50~350
Dielectric Insulation (GΩ),RT	>1	>1	>1.2
Life-Time(hr)	>1000	>2000	>2000
Breakdown voltage (KV/mm)	10	25	25

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碳化矽塊材規格表

(表格內容可透過左右拖移 )

Item / Unit				SiC
				Block
Thickness			µm	100 ~ 2000	100 ~ 2000	100 ~ 2000
Size			inch	Ф6"	Ф8"	Ф12"
Color			-	Carbon-black	Carbon-black	Carbon-black
Sape			-	Rotundity	Rotundity	Rotundity
Through hole			mm	-	-	-
Bulk density			g/cm3	3.2	3.2	3.2
Surface roughness			µm	-	-	-
Mechanical characteristic	3-point bending strength		MPa	400	400	400
	Young's modulus		GPa	400	400	400
	Vickers hardness		GPa	-	-	-
	Breakdown Strength		kV/mm	-	-	-
Thermal characteristic	Coefficient of thermal expansion	40-400℃	×10-6/K	3.9	3.9	3.9
		40-800℃	×10-6/K	4.3	4.3	4.3
	Thermal conductivity	25℃	W/(m・K)	130	130	130
	Specific heat		J/(kg・K)	-	-	-
Electric characteristic	Dielectric constant	1MHz	-	-	-	-
	Dielectric Loss	1MHz	×10-4	-	-	-
	Volume resistivity	25℃	Ω・cm	>3x108	>3x108	>3x108

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E-Churk 規格表

(表格內容可透過左右拖移 )

Items	Normal Temp. Sputtering	High Temp. Sputtering	HCAT
	Japanese Manufacturers	USA Manufacturers	TSV Specification
Susceptor material	Aluminum	Ceramics	Ceramics
Dimension(mm)	Ø330*9	Ø330*9	Ø330*9
Input Voltage(kV)	+/- 3	+/- 3	+/- 3
Operating Temp.(℃)	25~80	150~350	50~350
Dielectric Insulation (GΩ),RT	>1	>1	>1.2
Life-Time(hr)	>1000	>2000	>2000
Breakdown voltage (KV/mm)	10	25	25