AlN Wafer

Wafer-Levelled AlN Substrate: AlN is a material of high insulation and heat conductivity, with which it provides a solution to electrical leakage, circuit noise, and difficulty of heat dissipation frequently seen in the interposer. Hence, the material performs well especially on the highly powered, and microminiaturized products.

1 AlN Wafer

Product Features

• High Thermal Conductivity: 7-8 times higher than Aluminium oxide.
• High Thermal Dissipation: improving heat-retaining.
• CTE of AlN is close to Silicon wafer, that performs high reliability of thermo cycling  as a carrier of silicon wafers.
• High insulation resistance and low dielectric constant that provide the solution to the electrical leakage and noise caused by the damage of insulation coating.
• Higher mechanical strength and density compared to aluminum oxide.
• Perform stable corrosion resistance to molten metal.
• Non-toxic and stable components.

Specification

 

Speciality

HCAT adopts the special technology  to manufacture Wafer-levelled AlN substrates with good performance on TTV and Warp.

Application

Available for various applications such as substrates for heat dissipation, Package, thin-film circuit, power resistor, power modules (IGBT, MOSFET, and etc)